发明名称 PROCESSING METHOD FOR CONDUCTIVE FILM ON SUBSTRATE
摘要 <p>PURPOSE:To process a conductive film with a smaller number of stages by forming a linear open groove group by laser light to one side of a rectangular insulating substrate formed with the conductive film except in the peripheral part thereof in parallel therewith and forming the one end of the open groove group to a slightly oversize. CONSTITUTION:The transparent conductive film (tin oxide, etc.) 11 is formed on the rectangular insulating substrate (glass substrate) 10 except the peripheral part thereof. The light beam 20 from an eximer laser 1 is expanded by a beam expander 2 and is condensed by a cylindrical lens 14. Said beam is passed through a mask 3 provided selectively with a heat resistant light shielding material 3', by which part of the condensed light 22-1 is made into the slit beam 22-2. Such beam is projected to the transparent conductive film 11 to process and form the open groove 5. The mask 3 is so selected that one end of the groove 5 is slightly oversized at this time. The linear open groove group is successively formed by repeating the above-mentioned operation successively from one to the other end of the substrate 10. The number of the stages is thereby decreased from the conventional 7 stages to 2 stages (light projection and cleaning) and the electrode.leads are formed with good productivity.</p>
申请公布号 JPS6342364(A) 申请公布日期 1988.02.23
申请号 JP19860186202 申请日期 1986.08.08
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;MASE AKIRA;SAKAYORI HIROYUKI
分类号 C23C14/08;B23K26/06;G02F1/1343;G03F7/20;G09F9/30;H01L21/3205;H01L21/48;H05K3/02;H05K3/08 主分类号 C23C14/08
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