| 摘要 |
PURPOSE:To prevent the leakage of a semiconductor element and to prevent an erroneous operation of a semiconductor device by avoiding the movement of charge stored in a capacity element by applying a negative voltage to the gate electrode of the element during a memory cell holding period before refreshing the device. CONSTITUTION:After information is written in a memory cell 12, a negative voltage is applied to a gate electrode 10 during a period of a memory cell holding state up to the time of reflecting operation. Thus, holes are stored in a channel formed near the substrate surface between a source region 7 and a drain region 5, and the part between the regions 7 and 5 becomes nonconductive. Further, since electrons of the region 7 and a gate 2 repel each other, a leakage current between S and D scarcely flows. Since the negative voltage is applied to the gate electrode during the memory cell holding period in this manner, the movement of the charge stored in the capacity element can be positively suppressed to improve the retentivity of the stored content of the memory cell. |
