| 摘要 |
PURPOSE:To obtain a good characteristic of photovoltaic force by a method wherein lattice mismatching at a junction is eliminated in such a way that an amorphous silicon film of a heterojunction which is composed of a film of one conductive type and an amorphous silicon film of another conductive type is assigned as a light-incident side. CONSTITUTION:An amorphous silicon film of a heterojunction is assigned as a light-incident side in such a way that the heterojunction is composed of a film of one conductive type of a semiconductor which has the molecular formula in the form of CuInX2 in which X is an element of Group VI in the periodic table and an amorphous silicon film of another type. An N-type polycrystalline CuInSe2 film 2 of a semiconductor such as chalcopyrite type is formed on a metallic substrate 1 made of, for example, stainless steel, a P-type amorphous silicon film 3 into which boron, etc. is doped is then formed, and then a transparent conductive film 4, such as ITO film, SnO2, etc. is formed as an electrode opposite to the film substrate 1 so that a photovoltaic device can be constituted. Because one side of the heterojunction is an amorphous semiconductor, lattice mismatching at the junction is eliminated. |
