| 摘要 |
PURPOSE:To make it possible to eliminate the state of a short circuit which is caused through a thin-film semiconductor layer due to any defect which is produced during the film formation or processing by a method wherein a reverse bias is applied to a junction at a thin-film semiconductor layer equipped with electrodes on both faces and an electric current is applied to a short-circuited part between both electrodes for the purpose of heating. CONSTITUTION:A short-circuited defective part which produces a thinfilm semiconductor layer during the chemical vapor deposition or pattern formation and processing is removed after the part has been burnt off by applying a voltage in the reverse bias direction in relation to a junction at the semiconductor layer. For example, an a-Si film 1 has a PIN structure which is formed by laminating a P layer, an I layer and an N layer, for example, from a transparent electrode 2. Therefore, a terminal 6 which is installed at the end of the transparent electrode 2 functions as the positive pole of this solar battery, while an electrode 5 on the reverse face functions as its negative pole. After this positive pole has been connected with the negative pole of a power source 7 and its negative pole has been connected with the positive pole of the power source 7, a voltage having a waveform as shown in the figure is applied. An electric current flows only at the short-circuited part, evaporates or oxidizes the metal which buries a defective part 2 and separates both electrodes so that the solar battery can be restored to its healthy state. |
