发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
Disconnection and deterioration in step coverage of wirings are prevented to offer a semiconductor device having higher reliability. A pad electrode is formed on a surface of a silicon die. A via hole penetrating the silicon die is formed from a back surface of the silicon die to the pad electrode. A wiring layer disposed on the back surface of the silicon die runs through the via hole and is electrically connected with the pad electrode. The wiring layer covers a convex portion of silicon on the back surface of the silicon die. A solder ball is formed on the wiring layer on the convex portion of silicon. |
申请公布号 |
US7579671(B2) |
申请公布日期 |
2009.08.25 |
申请号 |
US20040851638 |
申请日期 |
2004.05.24 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TAKAO YUKIHIRO |
分类号 |
H01L23/52;H01L29/40;H01L21/3205;H01L23/12;H01L23/31;H01L23/48;H01L23/485 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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