发明名称 |
SEMICONDUCTOR POWER DEVICE AND METHOD OF MANUFACTURE |
摘要 |
A power semiconductor component having a component of this type is presented which has at least three consecutive layers and possessing a high current capacity and small power losses. For contacting the first two layers, the component has first and second metallized contact planes, which impress a step-like structure onto a first surface of the component. The steps have a height of between 10 and 20 mu m and a width of between 20 and 300 mu m. The ratio between the surface area of the first contact plane and the surface area of the second contact plane is between 1 and 4. The first layer is heavily doped and has a maximum thickness of 8 mu m, and the second layer is lightly doped and has a maximum thickness of 40 mu m. The invention further includes a process for manufacturing the component, wherein the surface structure according to the invention is produced essentially by a reactive ion-etching process with a single aluminum mask. |
申请公布号 |
DE3468787(D1) |
申请公布日期 |
1988.02.18 |
申请号 |
DE19843468787 |
申请日期 |
1984.02.20 |
申请人 |
BBC BROWN BOVERI AG |
发明人 |
GOBRECHT, JENS, DR.;ROGGWILLER, PETER, DR.;SITTIG, ROLAND, DR.;VOBORIL, JAN |
分类号 |
H01L29/74;H01L29/739;H01L29/744;(IPC1-7):H01L29/10;H01L29/08;H01L29/743 |
主分类号 |
H01L29/74 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|