MANUFACTURE OF SUBSTRATE FOR FORMING SEMICONDUCTOR ELEMENT,申请号JP19860182260-传众专利搜索

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发明名称	MANUFACTURE OF SUBSTRATE FOR FORMING SEMICONDUCTOR ELEMENT
摘要
申请公布号	JPS6338255(A)	申请公布日期	1988.02.18
申请号	JP19860182260	申请日期	1986.08.01
申请人	FUJITSU LTD	发明人	ARIMOTO YOSHIHIRO
分类号	H01L27/00;H01L21/02;H01L21/31;H01L21/76;H01L21/762;H01L21/84;H01L27/12	主分类号	H01L27/00
代理机构		代理人
主权项
地址

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