| 摘要 |
PURPOSE:To improve the operating efficiency and to improve the manufacturing yield of a resist mask by providing the steps of forming a film by applying a positive photoresist film to a wafer, exposing a circuit pattern and the peripheral edge of the wafer not formed with the circuit pattern on the photoresist film, and developing to remove the exposed part. CONSTITUTION:A wafer 11 is coated with a predetermined film of metal (Au, etc.), insulator (SiO2, etc.) and a magnetic material (Permalloy, etc.) on the surface by depositing or sputtering means in a predetermined film coating step 21. Pinholes of the film and the thickness of the film are inspected in an inspecting step 22, and a resist film is formed in a film forming step 23 of applying by spin coating a positive resist thereto and prepacking it to harden it. A light is emitted to a circuit pattern 12, a dummy circuit pattern 14 and a peripheral edge 13 in an exposing step 24, the exposed part of the resist film is removed by developing in a developing step 25. It is then cleaned and dried in washing and gas blowing steps 26, the nonexposed part of the resist film is sufficiently hardened in a postbaking step 27 to complete a resist mask 15, and the unnecessary part of the film is removed with the mask 15. |
