发明名称 METHOD OF DETECTING DEFECT ON SEMICONDUCTOR SUBSTRATE
摘要 <p>A method of detecting defects in a reticle used to fabricate semiconductor circuits by enhancing the image of a defect in one chip site without appreciably changing all other chip site images. In a step-and-repeat alignment system, a first chip site is exposed under normal intensities to print the reticle pattern at a proper exposure level. At a second chip site, exposure takes place using the same reticle (or a second identical reticle) at lower intensity levels. Given this underexposure, residual photoresist will remain at defect sites. The optical imagery at the two chip sites is different allowing comparator techniques to be used.</p>
申请公布号 JPS6337617(A) 申请公布日期 1988.02.18
申请号 JP19860176871 申请日期 1986.07.29
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 AREKISANDAA REON FURAMUHORUTSU
分类号 G01N21/88;G01N21/93;G01N21/956;G03F1/62;G03F1/84;G03F7/20;H01L21/027;H01L21/30;H01L21/66 主分类号 G01N21/88
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