发明名称 |
METHOD OF DETECTING DEFECT ON SEMICONDUCTOR SUBSTRATE |
摘要 |
<p>A method of detecting defects in a reticle used to fabricate semiconductor circuits by enhancing the image of a defect in one chip site without appreciably changing all other chip site images. In a step-and-repeat alignment system, a first chip site is exposed under normal intensities to print the reticle pattern at a proper exposure level. At a second chip site, exposure takes place using the same reticle (or a second identical reticle) at lower intensity levels. Given this underexposure, residual photoresist will remain at defect sites. The optical imagery at the two chip sites is different allowing comparator techniques to be used.</p> |
申请公布号 |
JPS6337617(A) |
申请公布日期 |
1988.02.18 |
申请号 |
JP19860176871 |
申请日期 |
1986.07.29 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
AREKISANDAA REON FURAMUHORUTSU |
分类号 |
G01N21/88;G01N21/93;G01N21/956;G03F1/62;G03F1/84;G03F7/20;H01L21/027;H01L21/30;H01L21/66 |
主分类号 |
G01N21/88 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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