| 摘要 |
PURPOSE:To enable the O2-RIE process in a 3-layer structure to be omitted and to enhance dry etching resistance by using an organic polymer, such as polydienes, as an interlayer, and a resist composed of a dye, an alkali-soluble polymer, and naphthoquinonediazide or the like azido compounds as an upper layer resist. CONSTITUTION:The upper layer resist composed of naphthoquinonediazide and the alkali-soluble polymer has a sensitivity to 300-440nm, and the lower layer resist can be exposed to light shorter in a wavelength region than the sensitive light of the upper layer resist by selecting the dye of the upper layer resist, and using the light of <=380nm wavelengths through a filter or the like, and a pattern high in aspect ratio. As the alkali-soluble polymer for the lower layer resist, polyvinylphenol, its halide, a novolak resin, a styrene/ethyl acrylate/ acrylic acid copolymer, other polymers having carboxylic acid groups or the like can be used. The naphthoquinonediazide compound can be selected from the compounds represented by formula I in which R is specified. |
