| 摘要 |
PURPOSE:To obtain a photoconductive film laminated solid state image sensing device in which an after-image remaining in a photoconductive film is reduced in the degree of being substantially ignored by providing a transparent electrode on an amorphous silicon, and applying a bias voltage for forming a predetermined potential difference between the transparent electrode and a source electrode of a vertical switch. CONSTITUTION:Vertical switches D, G, S are formed on a semiconductor substrate 1, a photoconductive film 2 made of an amorphous silicon is formed on the substrate 1, and a transparent electrode 3 is formed on the film 2. An aluminum electrode 4 is buried in the film 2, and individually connected to a source electrode S of the switch. An aluminum electrode 5 is connected also to the drain electrode D of the switch, and connected to the source electrode of a series of the switches to be used as a vertical signal transfer path. A bias voltage for forming a predetermined potential difference is applied between the electrode 3 and the source electrode of the switch. |
