Gain-controlled light-emitting semiconductor structure, and a method for its production

摘要

The invention relates to a gain-controlled light-emitting semiconductor structure and to a method for its production. In this case, a narrow current path is initially produced with the aid of a V-groove diffusion technology which is known per se. The V-groove is subsequently etched away so that a planar contact-making surface is produced in an advantageous manner. Such a semiconductor structure is suitable, for example, for producing a semiconductor laser or an LED.