| 摘要 |
PURPOSE:To prevent the performance of transistors from being deteriorated by forming a contact part of one of the drain regions of two transistors at one end of an active region, forming a contact part of the other of the drain regions at the other end of the active region, and forming a common contact to a common source region at the center. CONSTITUTION:Two transistors (e.g., Q1 and Q3) which have a common source in the islands of active regions (e.g., A). A contact hole 11 with the drain region of the transistor Q1 is formed (to be connected by aluminum wirings to a bit line BL1) at one end of the region A, a contact hole 31 with the drain region of the transistor Q3 is formed (to be connected to a bit line BL2 by aluminum wirings) at the other end of the region A, and a common contact hole 5 (to be connected to common source wirings S) with a common source region is formed at the two transistors Q1, Q3 at the center of the region A. |
