| 摘要 |
PURPOSE:To reduce an occurrence of defects caused by shorting upper and lower electrodes, by making the area and shape of an amorphous Si thin film identical with those of an upper electrode. CONSTITUTION:On a transparent insulating substrate 1-1, a transparent lower electrode 1-2 is formed and then an a-Si thin film 1-3 is piled. Successively, metal serving as a material for an upper electrode is piled on the a-Si layer, and then Al is etched to form an upper electrode 1-4, with a photoresist 1-5 serving as a mask. Successively, when CF4 plasma etching of the a-Si film is performed, with the upper electrode 1-4 and the photoresist 1-5 serving as masks, the Al becomes of an overhung structure. When the device is soaked with an Al etching solution before the photoresist 1-5 being peeled, sharp-edged parts of the upper electrode Al are etched, so that the overhung structure in the Al is removed. Finally, when the photoresist 1-5 is peeled, aphotoelectric conversion element, in which the area and shape of the a-Si layer are made identical with those of the upper electrode, can be manufactured. Hence, the upper and lower electrodes become hard to be shorted. |
