| 摘要 |
PURPOSE:To obtain a composite thyristor characterized by high gate sensitity and high dv/dt breakdown strength, by providing a main thyristor and a bipolar type insulated-gate field effect transistor on one semiconductor substrate. CONSTITUTION:On one semiconductor substrate 10, a one-conductivity type N<+> emitter region 21, a reverse-conductivity type P base region 22, a one- conductivity type N-base region 23 and a reverse-conductivity type P emitter region 24 are laminated in this order from the first main surface of the substrate 1 to the second main surface on the opposite side in parallel with the main surfaces. Thus a main thyristor 20 is provided. On the surface layer of the first main surface of the substrate 10, a one-conductivity type N<+> source region 31 and a channel forming part 32a of a reverse.conductivity type P body region 32 are provided. A one-conductivity type N<-> drain region 33 is formed in contact with the body region 32. A reverse-conductivity type P drain region 34 is attached and laminated in contact with the drain region 33 of a longitudinal field effect transistor having an insulated gate. A bipolar type insulated gate field effect transistor 30, which is formed in this way, is also provided together. |
