| 摘要 |
PURPOSE:To prevent the extrusion of an Au electrode and to prevent short- circuit defects of a p-n junction, by coating the Au electrode neighboring the active layer of a semiconductor laser element by a protecting film. CONSTITUTION:At least the peripheral part of the surface of a gold electrode 28 of a semiconductor laser element is coated by a protecting film 29 so that the gold electrode 28 is not extruded by an external force. Even though the external force is applied to a part of the gold electrode 28, the gold electrode 28 is not extruded from the outer edge of the element. Therefore, the short circuits in a p-n junction due to the contact of the extruded and drooped gold electrode 28 and the p-n junction part can be prevented. |
