| 摘要 |
PURPOSE:To reduce the reflectivity of an exposure light reflected from a step difference part, and prevent the defect of a resist pattern, by performing a whole surface etching after a rather thick metal film of high melting point is formed on a substrate having a high reflectivity, and introducing a process wherein a side wall structure of temporary reflecting film is formed on the step difference part. CONSTITUTION:After an intermediate insulating film 4 is formed by CVD method on a step difference formed on an Si substrate 1 by using a gate oxide film 2 and a gate electrode material 3, Al-Si as a wiring material 5 is formed by a sputtering method, and a temporary reflecting film 6 is formed rather thick by CVD method. Seeing from the upper part, the temporary reflecting film 6 becomes thick at the side of the step difference. An anisotropic etching is performed as it is, and the temporary reflecting film 6 is made a side-wall of the step difference. A positive type resist 7 is spread and subjected to exposure by a projection exposing method. By the effect of the side-wall after developing, the ratio of an exposure reflection light 8a to an exposure incidence light 8 is reduced, and the light in the direction of film thickness mainly contributes to the sensitization of the resist film 7. Thereby the resist film 7 free from defects can be obtained, which is used as a mask for the etching of an Al-Si film as a wiring material 5. Then the resist film is eliminated. |
