发明名称 DIVIDING METHOD FOR SEMICONDUCTOR WAFER
摘要 PURPOSE:To improve cutting quality by forming grooves to a semiconductor wafer by cutting with a dicing blade, then projecting laser light to the groove bottom, thereby making fusion cutting of the semiconductor wafer. CONSTITUTION:The semiconductor wafer 10 is imposed on the self-adhesive surface of a self-adhesive sheet 12 consisting of a UV curing resin, etc., and is joined by thermocompression bonding. The wafer 10 is then set to a dicing device and the cutting groove 14 is formed along the outside shape of a semiconductor chip 11 except the prescribed margin L to be left uncut by cutting with the dicing blade 13. Further, the wafer 10 is set to a laser device and the part remaining without being cut of the groove 14 is fusion-cut by the projection of the laser light. Since the part remaining without being cut is cut by the laser light, the cracking of the semiconductor chip 11 and the exfoliation thereof from the sheet 12 are prevented. The time for working is shortened as well. The cutting quality of the wafer to is thus improved.
申请公布号 JPS6336988(A) 申请公布日期 1988.02.17
申请号 JP19860178392 申请日期 1986.07.29
申请人 ROHM CO LTD 发明人 ITO SHUZO
分类号 B23K26/00;B23K26/40;B23K101/40;B28D5/00;H01L21/301;H01L21/78 主分类号 B23K26/00
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