| 摘要 |
A method for manufacturing a semiconductor device includes a step of forming a trench (2) in a surface of a semiconductor substrate (1) of a first conductivity type in a depth direction; a step of forming a conductive layer (4) in the trench, with a first insulating film (3a) interposed therebetween; a step of dividing the conductive layer into a gate electrode (4a) and an in-trench wiring layer (4b) which face each other in the trench and filling a gap between the gate electrode and the in-trench wiring layer with a second insulating film (3e); a step of introducing second-conductivity-type impurities into the entire surface of the semiconductor substrate to form a channel forming region (7) of a second conductivity type; and a step of selectively forming a main electrode region (8) of the first conductivity type in a portion of the channel forming region which is provided along an opening portion of the trench so as to come into contact with the opening portion. |
