发明名称 Read only memory circuit
摘要 A ROM circuit is used in place of a conventional fuse type ROM which is incorporated in a semiconductor integrated circuit network together with other circuit blocks on a chip. The ROM circuit comprises a first transistor having a control and a floating gate and a depletion type second transistor having a gate formed as an extension of the floating gate. The second transistor outputs a high level control signal if hot electrons have been accumulated on the floating gate of the first transistor by the application of a predetermined high level input signal to the control gate thereof, and outputs a low level signal when the high level input signal has not been provided to the control gate. The first transistor is freed from a soft write problem because it is separated from a voltage source in the read mode.
申请公布号 US4725980(A) 申请公布日期 1988.02.16
申请号 US19850798782 申请日期 1985.11.18
申请人 FUJITSU LIMITED 发明人 WAKIMOTO, HIDEYUKI;YOSHIDA, MASANOBU
分类号 G11C17/00;G11C16/04;G11C16/06;G11C29/00;G11C29/04;H01L21/8247;H01L27/10;H01L29/788;H01L29/792;(IPC1-7):H01L29/78;G11C11/34;H03K5/13 主分类号 G11C17/00
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