| 摘要 |
A memory cell has a pair of cross-coupled inverters, such as a CMOS pair. Diodes are coupled in series with the transistors to reduce the possibility of radiation-induced currents in the transistors causing a change in state of the cell by providing resistance that increases the cell time constant. The transistors and the diodes are formed in the body of a semiconducting material. The diodes require at most only a small additional cell area as compared with a cell that does not have the diodes.
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