| 摘要 |
Provided are a low-temperature polysilicon thin film transistor and a manufacturing method therefor, comprising: a substrate (1), a light shield layer (2) provided on the substrate (1), a liner layer (3) provided on the light shield layer (2), a dielectric layer (4) provided on the liner layer, an active layer (5) provided on the dielectric layer, a gate insulation layer (6) provided on the active layer (5), and a gate layer (7) provided on the gate insulation layer (6), wherein the light shield layer (2) comprises a flat part (21) provided on the substrate (1) and a protruding part (22) provided on the flat part (21); and the projection of the active layer (5) at least covers a local area of the upper surface of the protruding part (22) and a side wall (224) of the protruding part (22). On the premise of not changing the aperture rate of a display device, the width and width-length ratio of a channel can be effectively increased, the ON-state current is improved, and the drive capability and device performance of the low-temperature polysilicon thin film transistor are improved. |
