Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization

摘要

PCT No. PCT/FR85/00270 Sec. 371 Date Jun. 5, 1986 Sec. 102(e) Date Jun. 5, 1986 PCT Filed Oct. 1, 1985 PCT Pub. No. WO86/02198 PCT Pub. Date Apr. 10, 1986.This process consists of producing patterns (17) of an insulating material on a monocrystalline silicon substrate (12), depositing on the complete structure an amorphous or polycrystalline silicon film (26), covering the latter with a layer (28) of an encapsulating material, carrying out a heat treatment on the structure obtained serving to vertically embed in substrate (12) the insulating material patterns (17) and forming above the latter a monocrystalline silicon layer (33), eliminating the encapsulating material layer (28) and etching the monocrystalline silicon layer obtained (33), so as to form said islands (34).