| 摘要 |
PURPOSE:To miniaturize the element by reducing the area of the part of an intermediate insulation film by a method wherein the surface of a gate electrode is oxidized after forming the electrode, the part other than the gate forming part is etched, and further the side surface of the gate electrode is thermally oxidized after forming the source and drain. CONSTITUTION:A part of an Si wafer 1 is etched, and a field oxide film 2 is formed by CVD method, etc. Next, after forming a gate oxide film 3 on the wafer 1 by thermal oxidation, the gate electrode 4 is formed. Then, the surface of said electrode 4 is oxidized and thereafter etched by leaving the part serving as the gate. A metal 10 of a chemical potential for oxide formation much lower than that of Si is vapor-deposited, and further the silicide 11 of the metal 10 is formed. The side surface of the electrode 4 is oxidized by thermal oxidation. After selectively removing a metallic oxide 12, wirings 8 of the source and drain electrodes 11 are formed. |
