发明名称 SAPPHIRE INGOT MANUFACTURE OF HIGH POWER FACTOR MULTI TAP CONTROLLED POWER SUPPLY OF THE POWER CONTROL DEVICE
摘要 The present invention relates to a power control device for a high power factor multi-tap control power supply for manufacturing of sapphire ingots capable of significantly reducing power necessary for manufacturing of sapphire ingots by improving the power factor of the power supply for manufacturing of sapphire ingots and minimizing the total harmonic distortion ratio in a sapphire ingot manufacturing site. By adding one or more taps (30) to the first coil (20) of a transformer (10) in a single-phase and signal-tap AC SCR control scheme to segment the phase control section, the present invention can increase the power factor and decrease total harmonic distortion ratio. To each tap (30), an AC SCR (40) is connected individually.
申请公布号 KR20160080324(A) 申请公布日期 2016.07.08
申请号 KR20140191606 申请日期 2014.12.29
申请人 HITEM CO., LTD. 发明人 KIM, JONG WOO
分类号 H02M1/42;C30B29/20;H02P13/06 主分类号 H02M1/42
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