| 摘要 |
PURPOSE:To contrive stabilization, uniformity and improvement in reproducibility of characteristics of the title element as well as driving it at low voltage by a method wherein a semiconductor thin film, with which a barrier will be formed together with a conductive gate electrode, is provided adjacent to the conductive gate electrode. CONSTITUTION:The conductive layer of conductive gate 2 is formed on the substrate 100 made of glass and the like, and the size of plane surface of said conductive layer is trimmed into the prescribed shape. Then, a P-type amorphous silicon corresponding to the semiconductor layer 2a of a two-layer conductive gate is grown at least on the conductive gate 2, and the first semiconductor layer 1 is formed in the prescribed size on the semiconductor layer 2a of the two-layer conductive gate. This layer is the non-doped hydrogenated amorphous silicon obtained by performing a CVD method using silane or disilane. As said semiconductor layer 1 has a weak N-type conductive type, the P-type amorphous silicon forms a barrier against the non-doped amorphous silicon. Then, a metal thin film, to be turned into a conductive source region 5 and a drain region 6, is formed on the first semiconductor layer 1 in the prescribed shape, and the title field effect element is obtained. |
