| 摘要 |
PURPOSE:To realize an airtight sealing structure of high reliability by a method wherein a conductive protrusion is formed on a wiring material or on an AlN material, or the AlN material is connected with the wiring material by using a conductive substance, or the AlN material is connected with the conduction path on the surface of the wiring material. CONSTITUTION:A wiring material 7 is prepared after, in addition to a first conduction layer 111 and a second conduction layer 112, a conduction path 113 to be used for the back of a silicon chip 1 in order to control the potential of the silicon chip 1 from the outside has been attached. Then, a ring-shaped adherence material whose outward form is square and which is to be used for the back of the silicon chip is inserted into a hole from above so that the material can be set on a connecting electrode 18 to be used for the back of the silicon chip. A square AlN material 301 whose ends are removed and which, after its both faces have been thick-metallized, is plated is inserted into the hole and is set on the adherence material 19 to be used for the back of the silicon chip. Onto this material a metallic material 302 is set via an adherence material 303. This assembly is brazed collectively in a forming glass atmosphere. |
