| 摘要 |
<p>PURPOSE:To increase breakdown strength, and to reduce the dispersion of gm by providing an Al gate MOS FET in which offset regions of low concentration layers are formed by setting the width of the regions at a value wider than that of each region functioning as a drain region or a source region through self-alignment by using a gate opening section. CONSTITUTION:In an Al gate MOS FET, offset regions as low concentration layers 8, 9 are each shaped on both region sides of a drain region 2 and a source region 3 by setting the width of the offset regions at a value wider than that of respective region serving as the drain region 2 or the source region 3 through self-alignment by employing a gate opening section. Accordingly, since gm depends upon a space between the constantly formed low concentration layers 8, 9 at all times, gm is not varied even when the positions of the end surfaces on the opposite sides of the low concentration layers 8, 9 are shifted by positioning displacement, thus extremely reducing the dispersion of gm, then stabilizing the breakdown strength of a junction section of both regions 2, 3 and a channel region.</p> |
