| 摘要 |
A thin film transistor technology where a gate member (3) on a substrate surface (2) is in electric field influenceable proximity to active semiconductor devices in the direction normal to the substrate surface and the ohmic electrodes (32-35) of the active device are parallel with the substrate surface. The gate is formed on the substrate and conformal coatings of insulator (6) and semiconductor (31) are provided over it. A metal is deposited from the direction normal to the surface that is thicker in the horizontal dimension than the vertical so as to be susceptible to an erosion operation such as a dip etch which separates the metal into self-aligned contact areas (32, 33; 34, 35) on each side of a semiconductor device channel without additional masking. Self-alignment of the source, drain and gate can be achieved by insulator additions above and under the gate fabricated without additional masking. |
