| 摘要 |
PURPOSE:To make it possible to reduce an area for forming a memory cell and to be strong against a software error in a semiconductor storage device by composing a transfer transistor of a polysilicon transistor made at its source, drain and channel of polysilicon layers. CONSTITUTION:N<+> type impurity regions 13, 14 formed in a polysilicon layer 15 correspond to n<+> type diffused layers 6, 7. A p<+> type impurity region 16 is a part which becomes the channel of a polysilicon transistor 17. The n<+> type region 13 of the polysilicon layer is formed continuously to a storage node 4. A bit line 12 is connected to the layer 15 in a hole 18. Since the node 4 and the region 13 of the transistor 17 are continuously formed, the area can be miniaturized. Since the connection with the line 12 is formed in the hole 18 on the layer 15, even if charge is generated in a substrate 1 by the introduction of alpha-particles, it is not collected in the node 4 and the line 12 but becomes a construction strong against the software errors of a cell mode and a bit line mode. |
