| 发明名称 |
METAL/SEMICONDUCTOR DEPOSITION |
| 摘要 |
Metal is deposited by bias sputtering over a two-layer photoresist mask, the lower layer having a thickness at least 1.5 times the metal thickness and the second layer having an edge overhang in excess of 0.1 mu m, and unwanted metal removed by lift-off. |
| 申请公布号 |
DE3468584(D1) |
申请公布日期 |
1988.02.11 |
| 申请号 |
DE19843468584 |
申请日期 |
1984.11.08 |
| 申请人 |
BRITISH TELECOMMUNICATIONS PLC |
发明人 |
MARTIN, BRIAN, DR. |
| 分类号 |
H01L21/3205;G03F7/095;H01L21/027;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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