| 摘要 |
<p>A low temperature chemical vapor deposition process is used to encapsulate metal conductors (5) on the surface of a silicon substrate (11) to form bimetallic conductors. The refractory material (9) is desirably tungsten. The bimetallic conductors are over a substrate (1) and contact selected portions of the substrate through openings (7) in dielectric layer (3).</p> |
