SCHOTTKY BARRIER DIODE WITH A GUARD RING AND METHOD OF MAKING SAME

摘要

The Schottky barrier diode having a self-aligned guard ring comprises a dielectric layer (3) on a silicon substrate said layer (3) having a substantially vertically walled hole therein, a doped silicon lining (5) being of uniform width covering the silicon along the walls of said hole and contact metal (7) on said substrate exposed within the inner perimeter of that lining (5).
To produce such a diode a hole ist etched anisotropically into a dielectric layer (3) on a silicon substrate. Then a doped silicon layer (4) is deposited which is reactively ion etched, to expose said substrate through said hole. By heating the dopant in the remainder of said silicon layer (4) is diffused into the substrate. Onto the exposes substrate metal (7) is applied.