| 摘要 |
The present invention relates to a semiconductor device having work-function metal. First to third active regions are formed on a substrate. A first gate electrode, a second gate electrode, and a third gate electrode are formed on the first active region, the second active region, and the third active region, respectively. The first gate electrode has a first P-work-function metal layer, a first capping layer, a first N-work-function metal layer, and a first barrier metal layer, and a first conductive layer. The second gate electrode has a second capping layer, a second N-work-function metal layer, a second barrier metal layer, and a second conductive layer. The third gate electrode has a second P-work-function metal layer, a third capping layer, a third N-work-function metal layer, and a third barrier metal layer. The third gate electrode does not have the first and second conductive layers. |
