| 发明名称 |
Insulated gate bipolar-mode field effect transistor. |
| 摘要 |
An insulated gate bipolar transistor (IGBT) device incorporates a base contact (40a,40b) usable with an external circuit for depleting charge from the base (18) when stopping bipolar conduction, thereby increasing turn-off speed. Fabrication of the IGBT is described.
|
| 申请公布号 |
EP0255782(A2) |
申请公布日期 |
1988.02.10 |
| 申请号 |
EP19870306786 |
申请日期 |
1987.07.30 |
| 申请人 |
SILICONIX INCORPORATED |
发明人 |
COGAN, ADRIAN I.;SEVERNS, RUDOLF P. |
| 分类号 |
H01L29/68;H01L29/739;H01L29/78;(IPC1-7):H01L29/72;H01L29/08 |
主分类号 |
H01L29/68 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
