The present invention relates to a producing method of graphene comprising the following steps of: forming a double metal catalyst layer which satisfies the thickness ratio through calculating the thickness ratio of a first metal layer and a second metal layer suitable for the transmission rate and the resistance to a target and forming the second metal layer on the first metal layer; and growing graphene having the transmission rate and the resistance to the target using chemical vapor deposition on the double metal catalyst layer satisfying the thickness ratio.
申请公布号
KR20160098637(A)
申请公布日期
2016.08.19
申请号
KR20150020054
申请日期
2015.02.10
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
CHOI, JIN SIK;CHOI, HONG KYW;CHOI, CHOON GI;YU, YOUNG JUN;KIM, JIN TAE;CHUNG, KWANG HYO;HWANG, CHI YOUNG