| 摘要 |
PURPOSE:To prevent loss of optical output due to scattering at the light emitting end face and form a current injection region with high accuracy of the length by adjusting the current injection region by cutting the specified wiring after forming cleavage to the wafer by forming a plurality of internal electrodes and wirings connected in parallel with the current injection region. CONSTITUTION:After a plurality of internal electrodes 81 and wirings 83 connected electrically in parallel are formed to the current injection region 6 arranged like a stripe in parallel to the light emitting direction A, a cleavage is formed on the wafer to form a chip. Thereafter, a plurality of wirings 83 are partly cut 84 in order to set the current injection region 61 to the specified length and these are electrically insulated. Therefore, scattering of optical output at the light emitting end face can be prevented, accuracy in length of the current injection region 61 is determined by the arrangement interval of internal electrode 81 connected to the current injection region 6, and thereby an end face light emitting diode can be formed as designed with specified light emitting characteristics and improvement of yield. |
