| 摘要 |
PURPOSE:To prevent a malfunction due to the fluctuation of power and ground levels by making CMOS transistors (TRs) to a nonconductive state at the point of time of a change in the conductive state and the nonconductive state of both the CMOS TRs constituting an output buffer. CONSTITUTION:A data inputted from a data input terminal D is outputted from an output terminal OUT via a buffer comprising a NMOS TR 3 and an NMOS TR 4. An input signal is fed to one terminal of a NAND gate 1 and a NOR gate 2 and outputs of the gates 1, 2 are fed respectively to the gates of the TRs 3, 4. Further, an output being the inversion of an output of the NOR gate 2 by the inverter 6 is fed to the other terminal of the NAND gate l and an output being the inversion of the output of the NAND gate 1 by the inverter 5 is fed to the other terminal of the NOR gate 2. Thus, both the TRs 3, 4 are not conductive simultaneously. |
