发明名称 Process for the production of semiconductor materials
摘要 An improvement in a process for the production of semiconductor materials from the vapor decomposition of a precursor compound of the desired semiconductor material and the deposition of the desired semiconductor material. The improvement comprises the heating of the exterior surface of a metallic enclosure of a reactor to facilitate preheating thin rods of the semiconductor material, the rods supplying the heat for decomposition and acting as a substrate for deposition, to a temperature of about 250 DEG C. to render the thin rods conductive enough to effectively pass an electric current.
申请公布号 US4724160(A) 申请公布日期 1988.02.09
申请号 US19860889666 申请日期 1986.07.28
申请人 DOW CORNING CORPORATION 发明人 ARVIDSON, ARVID N.;GREENE, MICHAEL H.;MCCORMICK, JAMES R.
分类号 C23C16/46;(IPC1-7):B05D3/14 主分类号 C23C16/46
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