发明名称 |
Process for the production of semiconductor materials |
摘要 |
An improvement in a process for the production of semiconductor materials from the vapor decomposition of a precursor compound of the desired semiconductor material and the deposition of the desired semiconductor material. The improvement comprises the heating of the exterior surface of a metallic enclosure of a reactor to facilitate preheating thin rods of the semiconductor material, the rods supplying the heat for decomposition and acting as a substrate for deposition, to a temperature of about 250 DEG C. to render the thin rods conductive enough to effectively pass an electric current.
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申请公布号 |
US4724160(A) |
申请公布日期 |
1988.02.09 |
申请号 |
US19860889666 |
申请日期 |
1986.07.28 |
申请人 |
DOW CORNING CORPORATION |
发明人 |
ARVIDSON, ARVID N.;GREENE, MICHAEL H.;MCCORMICK, JAMES R. |
分类号 |
C23C16/46;(IPC1-7):B05D3/14 |
主分类号 |
C23C16/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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