| 摘要 |
PURPOSE:To obtain the uniform film having few defects by a method wherein the carrier gas consisting of inert gas is mixed in raw gas and an alloy growing method is performed. CONSTITUTION:SiF4, GeF4 and a little quantity of H2 are used as raw gas, and the gas is fed into the vacuum chamber in which a substrate is arranged at the total flow rate of 100cc/minute, for example. Then, the reaction pressure of the vacuum chamber is regulated by feeding helium (He) as carrier gas consisting of inert gas in such a manner that the pressure will be brought to 133 Pa. Subsequently, plasma is generated between two paralleled electrodes by applying the power of 80mW/cm<2> to an electrode and by decomposing the raw gas using said plasma, and the amorphous silicon germanium, which is the material of a low energy gap, can be grown on the substrate which has been heated up to 280 deg.C or above in advance. As a result, the growth stage of the amorphous silicon alloy can be controlled easily, and the low energy gap material having few defects can also be grown. |
