| 摘要 |
PURPOSE:To stabilize the composition of a low oxide thin film by using a target consisting essentially of Te, introducing gaseous Ar and O2 mixed with a desired ratio beforehand into a vacuum tank and forming the low oxide thin film including Te on a substrate. CONSTITUTION:From a gas supplying source 13 containing the mixed gas of gaseous Ar gaseous O2 through the main valve 14 of a supplying gas, the flow rate of the mixed gas is set by a mass flow meter 15 and the mixed gas is introduced to a vacuum tank 7. The whole pressure of the vacuum tank is 4X10<-3>Torr, and then, the ratio of the mixed gas is specified to be Ar:O2=4:1.7 and the introducing flow rate is set to 5.7SCCM. Next, the supplying power to Te target is set. In a supplying power density of 3W/cm<2>, the low oxide thin film, in which an O/Te is about 1.0, is formed on the substrate. The whole pressure and introducing mixed gas flow rate are fixed and the supplying power density to the target is increased. Thus, the O/Te can be reduced, the composition ratio can be also controlled by a power value and the composition ratio of the low oxide thin film can be specified. |
