| 摘要 |
PURPOSE: To ensure the characteristics in high speed operation of the title device without having a sharp decrease in the degree of integration by a method wherein, in the integrated injection logics (IIL) especially those which can operated at high speed among a number of the IILs, the degree of allowance of the electrode size for the opening size of the contact hole, to be used for picking out of the electrode, is increased in size. CONSTITUTION: In the integrated injection logic (IIL) 1 of a high speed part 10, the plane surface pattern size w4 of an electrode 7 having the allowance larger than that of the medium speed part and the low speed part is formed, and the difference in said size w4 and the opening size w3 of a contact hole 6 is increased considerably. Pertaining to the IILs 1 only which are operated at the top speed, they are arranged in such a manner that their longitudinal direction is brought in parallel with the travelling direction of the injector (INJ), and on the other hand, the other IILs which are operated at a relatively low speed are arranged in such a manner that their longitudinal direction intersects at right angles with the travelling direction of the INJ. As a result, the speed of actual operation of the semiconductor integrated circuit device can be increased further. |
