| 摘要 |
PURPOSE: To prevent the intersection part of the first step mesa groove with the second step mesa groove of a semiconductor substrate from being exposed out of a baked glass without increasing the leakage current by a method wherein the projecting end of an SiO2 film is measured from the vertical projecting point toward the semiconductor substrate side in the direction in parallel with the main surface of semiconductor substrate not to exceed the projecting length of SiO2 film. CONSTITUTION:The intersection part B of the first step mesa groove 5 with the second step mesa groove 6 is completely covered with a glass 8. The position of the intersection B is specified so that when the projection length l2 of an SiO2 7 is compared with the length l1 from the vertical projecting point of projected end of SiO2 7 in the direction of a substrate 1 to the intersection part B measured in the direction in parallel with the main surface of silicon substrate 1, the following requirement shall be met, i.e., l1 <= l2. In such a constitution, the projecting length l2 of SiO2 7 can be decided by the depth d1 of the first step mesa groove 5 but the depth d2 of the second mesa groove 6 being deeper than the d1, a pn junction 4 can be provided on the position distant from the surface of silicon substrate 1. |
