| 摘要 |
PURPOSE:To facilitate the programming in electrical manner by removing the state of capturing electrons in the part corresponding to the interface with the floating gate of a thermal oxide film by a method wherein the surface of the thermal oxide film under the floating gate is trated with acid solution before growing poly Si which becomes the floating gate. CONSTITUTION:The interface of the thermal oxide film 3 is treated with acid solution before growing the floating gate poly Si 4. Thereby, the state of capturing electrons in the part of the interface can be removed. Thus, the electrons does not become being captured, and the hindrance of electron injection into the floating gate is not generated, therefore a floating gate nonvolatile semiconductor memory device wherein the programming is electrically facilitated can be formed. |
