| 摘要 |
<p>PURPOSE:To obtain a highly reliable thin-film transistor which can be manufactured easily, by using the same mask for patterning all of a gate electrode, a gate insulation film, an active layer and an ohmic contact layer and over-exposing them from the bottom side of the substrate. CONSTITUTION:By using a mask having patterns of a gate electrode and a gate bus, an N<+> type amorphous silicon layer 5', an I-type amorphous silicon layer 4', a silicon nitride layer 3' and a molybdenum layer 2, are patterned to obtain an ohmic contact layer 5, a gate insulation film 3 and a gate electrode 2. Subsequently, a silicon nitride film 6' is formed and a negative resist is applied thereon. The substrate is then exposed to light from the bottom side thereof for a period of time three to five times as long as ordinary exposure time, whereby a resist pattern is obtained to cover the inside of the pattern up to 3 mum from the periphery. The silicon nitride film 6' is patterned with the resist pattern used as a mask to obtain an upper insulation film 6. In this manner, the manufacturing processes can be remarkably simplified while, at the same time, the yield can be improved.</p> |
