| 摘要 |
PURPOSE:To enable a delay amount of an output signal to be controlled without variation of output level, by applying variable voltage to a region located under a field effect transistor on the surface of a conductor. CONSTITUTION:An N-channel MOSFETMn constituting a CMOS inverter of a field effect semiconductor device is opposed, at the bottom side thereof, to a semiconductor well through an insulation film 3, and a delay control signal can be applied between the semiconductor well 2 and the ground. The delay control signal can control the amount of delay of the N-channel MOSFETMn and, hence, can change the delay time between input and output of the CMOS inverter constituted by the N-channel MOSFETMn. Therefore, a supply voltage Vdd applied to the MOS inverter need not be varied and the output signal level of the MOS will not vary. |
