| 摘要 |
PURPOSE:To prevent breakdown of a bonding part, by mounting multiple GaAs compound semiconductor chips on wiring substrate made of a GaAs compound semiconductor, and fixing the interconnection substrate to an alumina ceramic package base. CONSTITUTION:Multiple GaAs compound semiconductor chips 1 are bonded to a wiring substrate comprising a GaAs compound semiconductor. The wiring substrate 3 is fixed to a package base 4 made of alumina ceramics. Thus, the wiring substrate 3 can be manufactured from a GaAs compound semiconductor wafer. Highly accurate machining can be performed in a wafer process. Minute wiring can be performed. Stress due to the difference in thermal expansion coefficients is hard to be applied to a bonding part 2 of the chips 1 and the wiring substrate 3, where breakdown is liable to occur. Therefore, the breakdown of the bonding part 2 can be prevented. |
