发明名称 |
METHOD OF FABRICATING FOR ZN DOPED TIN OXIDE |
摘要 |
Provided is a method for fabricating a Zn-doped tin oxide thin film. The method for fabricating the thin film includes a step of preparing a source solution including Zn and Sn; and a step of providing the source solution onto a substrate, and manufacturing a base layer including a Zn-doped tin oxide. The content of Zn in the base layer may be lower than the content of the Zn in the source solution. So, fabricating costs can be reduced. |
申请公布号 |
KR20160103576(A) |
申请公布日期 |
2016.09.02 |
申请号 |
KR20150025642 |
申请日期 |
2015.02.24 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
PARK, JIN SEONG;BAE, JAE YOON |
分类号 |
H01L21/208 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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