发明名称 METHOD OF FABRICATING FOR ZN DOPED TIN OXIDE
摘要 Provided is a method for fabricating a Zn-doped tin oxide thin film. The method for fabricating the thin film includes a step of preparing a source solution including Zn and Sn; and a step of providing the source solution onto a substrate, and manufacturing a base layer including a Zn-doped tin oxide. The content of Zn in the base layer may be lower than the content of the Zn in the source solution. So, fabricating costs can be reduced.
申请公布号 KR20160103576(A) 申请公布日期 2016.09.02
申请号 KR20150025642 申请日期 2015.02.24
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 PARK, JIN SEONG;BAE, JAE YOON
分类号 H01L21/208 主分类号 H01L21/208
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