发明名称 DIE BONDING OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To prevent chip cracking, chip warping and exfoliation of a bonding agent and to improve the yield rate in die bonding, by bonding the central region of a semiconductor chip, providing a material such as resin film at a peripheral region, thereby filling a gap. CONSTITUTION:A bonding agent 5, in which a central region 3 is thicker than a peripheral region 4, is mounted between a tab 1 and a semiconductor element 2. A material 6 is provided on the peripheral region 4 of the bonding aegnt 5. Pressure is applied from the upper direction, and the device is heated. The semiconductor element 2 is bonded to a lead frame at the central region 3. The peripheral region 4 is not bonded because of the presence of the provided material 6. Thus, a chip can be securely bonded at the central region to the supporting body. Thermal strain can be absorbed in the peripheral region. Therefore, chip cracking and the chip warping can be reduced. Since the chip is not floated from the supporting body in the peripheral region, wire bonding can be performed excellently.
申请公布号 JPS6329524(A) 申请公布日期 1988.02.08
申请号 JP19860171669 申请日期 1986.07.23
申请人 HITACHI LTD;HITACHI MICRO COMPUT ENG LTD 发明人 TSUBOSAKI KUNIHIRO;SUZUKI KAZUNARI
分类号 H01L21/52 主分类号 H01L21/52
代理机构 代理人
主权项
地址