| 摘要 |
A thyristor having a semiconductor body with an emitter zone and a base zone formed thereon, an emitter electrode seated on the emitter zone, and a base electrode seated on the base zone, the emitter electrode being formed with a recess, includes a base emitter p-n junction disposed within the recess and adjoining a surface of the semiconductor body, a gate electrode seated on the base zone and an ohmic resistance integrated in the semiconductor body between the emitter electrode and the gate electrode, the p-n junction being locally bridged by one of the gate and emitter electrodes, the ohmic resistance having a value adjustable in accordance with a removal of a part of at least one of the gate and emitter electrodes.
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